Course Solutions Uncategorized (Solved) : 30 Pts 0d Defects Breaking Energy Formation Temperature Dependent Temperature Independent Q32431476 . . . .

(Solved) : 30 Pts 0d Defects Breaking Energy Formation Temperature Dependent Temperature Independent Q32431476 . . . .

 

(30 pts) 0D defects: Breaking the energy of formation into temperature dependent and temperature independent contributions, the concentration of point defects at thermal equilibrium can be.seen as an interplay between the entropy and the enthalpy of formation (S, Hs respectively): 3. 노을Esp/s)Exp( ) H,-TS, NA k T where Nontect is the concentration of vacancies, Na is the atomic density of the lattice (atoms/cm3). For vacancies or interstitials in silicon at thermal equilibrium, this was found to be (using the data from R. Falster 2000): Vacancies 222 ) acans = 5.56 × 105Exp( Interstitials interstitials N, 1.69x10 54543 a. Calculate Srand Hr(in units of ks and eV) for both vacancies and interstitials. b. Make an Arrhenius plot for each of these defects from T-4K to T 2000A. c. Calculate the concentrations of these defects at the melting point of silicon (T- 1687K), T-25K, T500 C-773K(30

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