Course Solutions Uncategorized (Answered) : Semiconductor Energy Gap 066 Ev Doped Donor Impurity Concentration 1 X 1016 Cm 3 Illuminat Q28685467

(Answered) : Semiconductor Energy Gap 066 Ev Doped Donor Impurity Concentration 1 X 1016 Cm 3 Illuminat Q28685467

A semiconductor with an energy gap of 0.66 eV and doped with donor impurity concentration of 1 x 1016 cm-3 is illuminated uniformly by a light source at 300 K. at a rate of 1 × 10 cm-s-i. Assume intrinsic carrier concentration ni = 2.4 × 10 cm and minority carrier lifetime t -1 us. Excess carriers are generated 3 20 (ii) Assume that a wavelength shorter than that determined in part (i) is used. After steady state is reached, the light is cut-off at an instant defined as i - 0 s and is turned back on again at t 1 us and thereafter. Calculate the excess minority carrier concentration at - 2 pus. State and justify any assumption(s) made.

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